To possess the lamination structure where production mannered null multiple GaN epitaxial crystal formations of the vertical die GaN

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based field effect transistor for indicating improved breakdown voltage properties since a GaN crystal at a region where an electric field is concentrated in operated has high quality.;SOLUTION: The GaN-based field effect transistor has lamination structure 12 where a plurality of GaN epitaxial crystal layers 12A, 12B and 12C are laminated while a gate electrode G and a source electrode (opening electrode) S are arranged on the surface of the lamination structure, and a drain electrode D is arranged on a reverse side. In the GaN-based field effect transistor, electric field concentration regions R1 and R2 in operation have a reduced dislocation density than another region R2 in the lamination structure 12. The GaN-based field effect transistor is manufactured by performing selective crosswise growth on the surface of a substrate for growth where the same plane pattern as that of the operating electrode for forming the electric field concentrated regions in operation is formed by a material other than GaN-based materials on the surface, and hence growing a plurality of GaN epitaxial crystal layers for forming lamination structure, and then forming the operating electrode on the surface of the lamination structure.;COPYRIGHT: (C)2001,JPO