Study of the Electrical Contact Properties of Monolayer MoS_2/Si Heterojunction

摘要

We present the study of the electrical contact properties of monolayer MoS_2/Si in terms of semiconductor heterojunctions theory. It shows that the carrier concentration increases in exponential form with temperature, then gradually arrived to its saturation. Additionally, the energy band structures of monolayer MoS_2/n, p-Si heterojunctions have been developed before and after contacting. And the work functions of MoS_2 and Si, barrier height of the junctions have been investigated. The barrier height linearly increases with the carrier density in Si. Finally, we simulated the voltage-current property of the monolayer MoS_2/n, p-Si heterojunctions in terms of thermal diffused theory of semiconductor.