Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

摘要

Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N-2 ambient pressure for 5 min at temperatures of 1573-1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature. From Hall-effect measurements, p-type conductivity was found even for the sample with the lowest annealing temperature of 1573 K. For this sample, the acceptor activation ratio was 23% and the compensation ratio was 93%. The acceptor activation ratio increased to almost 100% and the compensation ratio decreased to 12% with increasing annealing temperature.