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Critical temperature and critical current density of hydrogen-doped SmFeAsO epitaxial films fabricated by thermal annealing with binary hydrides

机译:用二元氢化物热退火制造的氢掺杂SMFEASO外延膜的临界温度和临界电流密度

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摘要

Four kinds of binary hydrides (MgH2, CaH2, SrH2, and BaH2) were added to evacuated silica-glass ampules containing undoped SmFeAsO epitaxial films. Post-deposition thermal annealing was performed to dope hydrogen into the films. The annealing temperature was optimized for each hydride. Critical temperatures of 40 K and critical current densities (J(c)) = similar to 1 MA cm(-2)at 2 K and a self-field were observed in the hydrogen-doped films annealed with CaH2, SrH2, and BaH2. This result would lead to acceleration of biaxially textured coated conductor researches on hydrogen-doped SmFeAsO exhibiting high-J(c)performance for high-field magnet application.
机译:加入四种二元氢化物(MgH2,CaH 2,SRH 2和BAH2),以抽空含有未掺杂的SMFEASO外延薄膜的二氧化硅玻璃AMPules。将沉积后热退火进行掺入膜中。对每个氢化物进行了优化的退火温度。 > 40k和临界电流密度(J(c))> =与2k的临界电流(J(c))> =在用CaH 2,SRH2和CaH 2,SRH2和SRH 2和CaH 2退火的氢掺杂膜中观察到自场的临界温度BAH2。该结果将导致对高磁磁体应用的高J(C)性能的氢掺杂SMFEASO的双轴纹理涂层导体研究。

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  • 来源
    《Annales de l'I.H.P》 |2020年第7期|073002.1-073002.5|共5页
  • 作者单位

    Tokyo Inst Technol Inst Innovat Res Lab Mat & Struct Midori Ku Mailbox R3-3 4259 Nagatsuta Cho Yokohama Kanagawa 2268503 Japan|Tokyo Inst Technol Mat Res Ctr Element Strategy Midori Ku Mailbox SE-1 4259 Nagatsuta Cho Yokohama Kanagawa 2268503 Japan;

    Tokyo Inst Technol Inst Innovat Res Lab Mat & Struct Midori Ku Mailbox R3-3 4259 Nagatsuta Cho Yokohama Kanagawa 2268503 Japan;

    Tokyo Inst Technol Mat Res Ctr Element Strategy Midori Ku Mailbox SE-1 4259 Nagatsuta Cho Yokohama Kanagawa 2268503 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Fe-based superconductors; thin films; hydrogen;

    机译:Fe基超导体;薄膜;氢气;

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