Scanning near-field optical microscopy based phase-change optical memory

摘要

A novel concept of scanning near-field optical microscopy based phase-change optical memory was proposed to avoid excessive temperature inside the capping layer of probe-based phase-change memory without impairing its attractive storage attributes. An indium tin oxide medium was chosen to be the capping layer of the designed device and its optical properties for different wavelengths and thicknesses were computed by first-principle calculations. Combining these calculated parameters with a developed thermo-optical model, the recording process of the proposed optical memory was investigated and its potential for providing ultra-high density, ultra-fast switching speed, ultra-low energy consumption, and superior thermal stability was theoretically demonstrated. (C) 2019 The Japan Society of Applied Physics