Eliminating negative-set behavior by adding a graphene blocking layer in resistive switching memory devices based on epoxy resin

摘要

Two types of memory devices of ITO/methacrylate epoxy resin (MER)/Al and ITO/graphene/MER/Al have been fabricated. And the reset failure phenomena are observed in ITO/MER/Al devices on account of an unexpected negative-set that occasionally appeared in the reset process. The negative-set resistive switching behavior and reset failure phenomenon have been successfully eliminated by adding a graphene blocking layer. In addition, the ITO/graphene/MER/Al device shows satisfying resistive switching performances, including large on/off ratio and long retention time. The experiment result shows that the "pool" of active atoms in the counter electrode offer the cations source lead to the negative-set behavior in the ITO/MER/Al device. (C) 2019 The Japan Society of Applied Physics