Effect of AlN Layer on the Bipolar Resistive Switching Behavior in TiN Thin Film Based ReRam Device for Non-Volatile Memory Application

摘要

The effect of an additional A1N layer in the Cu/TiN/AlN/Pt stack configuration deposited using sputtering has been investigated. The Cu/TiN/AlN/Pt device shows a tristate resistive switching. Multilevel switching is facilitated by ionic and metallic filament formation, and the nature of the filaments formed is confirmed by performing a resistance vs. temperature measurement. Ohmic behaviour and trap controlled space charge limited current (SCLC) conduction mechanisms are confirmed as dominant conduction mechanism at low resistance state (LRS) and high resistance state (HRS). High resistance ratio (10~2) corresponding to HRS and LRS, good write/erase endurance (10~5) and non-volatile long retention (10~5s) are also observed. Higher thermal conductivity of the A1N layer is the main reasons for the enhancement of resistive switching performance in Cu/TiN/AlN/Pt cell. The above result suggests the feasibility of Cu/TiN/A1N/Pt devices for multilevel nonvolatile ReRAM application.