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Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

机译：存储器件：通过抑制基于阳离子的内存（ADV。Mater。48/2016），消除纳米丝过度生长的负面设定行为

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Sen Liu; Nianduan Lu; Xiaolong Zhao; Hui Xu; Writam Banerjee; Hangbing Lv; Shibing Long; Qingjiang Li; Qi Liu; Ming Liu;
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1. Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory [J] . Liu Sen, Lu Nianduan, Zhao Xiaolong, Advanced Materials . 2016,第48期

机译：通过抑制基于阳离子的记忆中的纳米丝过度生长来消除负SET行为
2. Eliminating negative-set behavior by adding a graphene blocking layer in resistive switching memory devices based on epoxy resin [J] . Sun Yanmei, Wen Dianzhong, Sun Fengyun Annales de l'I.H.P . 2019,第7期

机译：通过在基于环氧树脂的电阻开关存储器装置中添加石墨烯阻塞层来消除负片行为
3. The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes [J] . H. X. Guo, L. G. Gao, Y. D. Xia, Applied Physicsletters . 2009,第15期

机译：基于固体电解质的电阻式开关存储器件中金属纳米丝的生长
4. Effect of Rotation Speed on Transformation Behavior in Ti-48atNi Shape Memory Alloy Melt-spun Ribbon [C] . Hongyan Xing, Hee Young Kim, Shuichi Miyazaki Pacific Rim International Conference on Advanced Materials and Processing; 20071105-09; Jeju Island(KR) . 2007

机译：转速对Ti-48at％Ni形状记忆合金熔纺薄带相变行为的影响
5. Electrical switching and memory behaviors in organic-based devices. [D] . Tu, Chia-Hsun. 2008

机译：基于有机的设备中的电气开关和存储行为。
6. Treadmill exercise suppressed stress-induced dendritic spine elimination in mouse barrel cortex and improved working memory via BDNF/TrkB pathway [O] . K Chen, L Zhang, M Tan, 2017

机译：跑步机运动通过BDNF / TrkB途径抑制了小鼠桶状皮质中应力诱导的树突棘消除并改善了工作记忆
7. Graphene Oxide Memory: Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory (Adv. Funct. Mater. 43/2015) [O] . Sung Kyu Kim, Jong Yoon Kim, Sung-Yool Choi, 2015

机译：石墨烯氧化物记忆：直接观察在石墨烯氧化物电阻开关记忆中导电纳米丝（ADV。Funct。Mater。43/2015）
8. Multidimensional Models of Hysteretic Material Behavior for Vibration Analysis of Shape Memory Energy Absorbing Devices [R] . Graesser, E. J., Cozzarelli, F. A. 1989

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Memory Devices: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory (Adv. Mater. 48/2016)

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