The boron detection in p-type metal oxide silicon (MOS) device had long been pursued with electron microscopy based analytical tools, but was not successful because of weak signal and interference from the matrix. With spherical aberration corrected electron microscope with newly designed sample holder, mesh and focused ion beam (FIB) damage removing process, boron in the extension area of the p-type MOS device was detected. This enables us to visualize the dopant distribution in silicon devices, which is indispensable to analyze transistor characteristics.
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