High Performance Extremely Thin Body InGaAs-on-lnsulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-lnGaAs Metal Source/Drain

摘要

The extremely thin body (ETB) InGaAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) on Si substrates were demonstrated by using Ni-lnGaAs alloy metal source/drain (S/D). It has been found that a light doping concentration of ~10~(16) cm~(-3) and indium-rich InGaAs channels (lno.7Gao.3As) provide a high mobility of 1700 cm~2 V~(-1) s~(-1) even in the channel thickness of 10nm. This is the first demonstration of ETB III-V-OI MOSFETs combined with the metal S/D technology. We have also achieved excellent /d-Vq characteristics with an /on/off ratio of over 10~s and low SS of 120mV/dec in 5-nm-thick ln_(0.7)Ga_(0.3)As-OI MOSFETs.