METAL-OXIDE-SEMICONDUCTOR (MOS) FIELD EFFECT TRANSISTOR HAVING EXTREMELY SHALLOW SOURCE/DRAIN ZONES AND SILICIDE TERMINAL ZONES, AND A PROCESS FOR PRODUCING THE TRANSISTOR CIRCUIT

摘要

ABSTRACT OF THE DISCLOSUREA metal-oxide-semiconductor (MOS) field effecttransistor comprises monocrystalline, doped silicon zones whichare formed between gate electrodes and the field oxide zones byselective epitaxy and which simultaneously serve as diffusionsources for the formation of source and drain zones in thesubstrate and as terminal zones for silicide source and drainterminals. This terminal technology serves to form particularlyplanar structures, with a high integration density, whichstructures are characterized by reduced drain field strength, lowseries resistances and a small danger of substrate shortcircuits. Processes for the formation of this structure in CMOScircuits are simple to perform. The present invention can beapplied to all NMOS, PMOS and CMOS circuits.