首页>
外国专利>
Metal-oxide semiconductor (MOS) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit
Metal-oxide semiconductor (MOS) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit
展开▼
机译:具有极浅的源极/漏极区和硅化物端子区的金属氧化物半导体(MOS)场效应晶体管及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A metal-oxide-semiconductor (MOS) field effect transistor comprises monocrystalline, doped silicon zones which are formed between gate electrodes and the field oxide zones by selective epitaxy and which simultaneously serve as diffusion sources for the formation of source and drain zones in the substrate and as terminal zones for silicide source and drain terminals. This terminal technology serves to form particularly planar structures, with a high integration density, which structures are characterized by reduced drain field strength, low series resistances and a small danger of substrate short circuits. Processes for the formation of this structure in CMOS circuits are simple to perform. The present invention can be applied to all NMOS, PMOS and CMOS circuits.
展开▼