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Immersion Lithography:Photomask and Wafer-Level Materials

机译:浸没式光刻:光掩模和晶圆级材料

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Optical immersion lithography utilizes liquids with refractive indices >1 (the index of air) below the last lens element to enhance numerical aperture and resolution, enabling sub-40-nm feature patterning. This shift from conventional dry optical lithography introduces numerous challenges requiring innovations in materials at all imaging stack levels. In this article, we highlight the recent materials advances in photomasks, immersion fluids, topcoats, and photoresists. Some of the challenges encountered include the fluids' and photomask materials' UV durability, the high-index liquids' compatibility with topcoats and photoresists, and overall immersion imaging and defectivity performance. In addition, we include a section on novel materials and methods for double-patterning lithography-a technique that may further extend immersion technology by effectively doubling a less dense pattern's line density.
机译:光学浸没式光刻技术利用最后一个透镜下方的折射率大于1(空气的折射率)的液体来增强数值孔径和分辨率,从而实现40 nm以下的特征图案化。与传统的干法光刻技术相比,这种转变带来了许多挑战,需要在所有成像堆栈级别进行材料创新。在本文中,我们重点介绍了光掩模,浸入液,面漆和光致抗蚀剂方面的最新材料进展。遇到的一些挑战包括流体和光掩模材料的紫外线耐久性,高折射率液体与面漆和光刻胶的相容性以及整体浸没成像和缺陷性能。此外,我们还包括有关用于双图案化光刻的新型材料和方法的部分,该技术可以通过有效地使密度较小的图案的线密度加倍来进一步扩展浸没技术。

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