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Symbolic noise modeling, analysis and optimization of a CMOS input buffer

机译:CMOS输入缓冲器的符号噪声建模,分析和优化

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This paper presents the symbolic noise modeling, analysis and optimization of an Input Buffer designed using RFCMOS technology, intended to be used in a high speed Track and Hold Amplifier (THA). The symbolic noise modeling and analysis are carried out by modeling each RF-MOSFET present in the Input Buffer by its nullor equivalent noise model. This helps in better understanding the noise involvement with the circuit and its optimization. All the extrinsic and intrinsic components associated with the RF-MOSFET used for the symbolic noise analysis are obtained using parameter extraction technique. The parameter extraction and symbolic noise analysis are done using MATLAB. The results obtained through MATLAB simulation are in good agreement with the results obtained from SPICE.
机译:本文介绍了使用RFCMOS技术设计的输入缓冲器的符号噪声建模,分析和优化,旨在用于高速跟踪和保持放大器(THA)。符号噪声建模和分析是通过使用其零值或等效噪声模型对输入缓冲器中存在的每个RF-MOSFET进行建模来进行的。这有助于更好地理解电路所涉及的噪声及其优化。使用参数提取技术可获得与用于符号噪声分析的RF-MOSFET相关的所有外部和本征分量。使用MATLAB进行参数提取和符号噪声分析。通过MATLAB仿真获得的结果与从SPICE获得的结果非常吻合。

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