Realization of 1.3 μm semiconductor laser using uniform quantum dots of high density

摘要

We fabricated a five-layered InAs quantum dot (QD) with a high density and uniformity of 1.0 × 10~(11) cm~(-2) and 23 meV, respectively, by employing an As_2 source and a gradient composition strain reducing layer. This five-layered QD laser with a 0.5-mm cavity length and cleaved facet emits 1.3 μm wavelength light at room temperature. Moreover, we could achieve a high modal gain of 43 cm~(-1) at 1.3μm due to the high density and uniformity of the QDs.