S-parameter-measurement-based high-speed signal transient characterization of VLSI interconnects on SiO/sub 2/-Si substrate

摘要

A new S-parameter-based signal transient characterization method for very large scale integrated (VLSI) interconnects is presented. The technique can provide very accurate signal integrity verification of an integrated circuit (IC) interconnect line since its S-parameters are composed of all the frequency-variant transmission line characteristics over a broad frequency band. In order to demonstrate the technique, test patterns are designed and fabricated by using a 0.35 /spl mu/m complementary metal-oxide-semiconductor (CMOS) process. The time-domain signal transient characteristics for the test patterns are then examined by using the S-parameters over a 50 MHz to 20 GHz frequency range. The signal delay and the waveform distortion presented in the interconnect lines based on the proposed method are compared with the existing interconnect models. Using the experimental characterizations of the test patterns, it is shown that the silicon substrate effect and frequency-variant transmission line characteristics of IC interconnects can be very crucial.