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机译:化学气相沉积法合成高质量的大面积均质1T'MoTe2
MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;
MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA;
MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;
MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA|Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Hunan, Peoples R China;
SINOPEC, Res Inst Petr Proc, Beijing 100083, Peoples R China;
MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;
Saitama Univ, Dept Chem, Grad Sch Sci & Engn, Saitama 3388570, Japan;
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA|MIT, Dept Nucl Sci & Engn, 77 Massachusetts Ave, Cambridge, MA 02139 USA;
MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;
MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA;
MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA|MIT, Dept Phys, Cambridge, MA 02139 USA;
机译:用化学气相沉积生长1T'-Mote2纳米线中的一维弱的防蚀作用
机译:通过化学气相沉积合成的2H / 1T'mote2内外过度结构的低接触屏障
机译:化学气相沉积生长的单层单晶1T'-MoTe2具有弱的抗局部化作用
机译:通过化学气相沉积路线简单地在介电基板上合成大面积多层石墨烯膜(通过CVD路线在介电基板上合成MLG膜)
机译:通过化学气相沉积合成的大面积石墨烯,用于高性能,柔性电子产品
机译:化学气相沉积生长的单层单晶1T-MoTe2具有弱的抗局部化作用
机译:碲化速度依赖性的金属化学型Mething Metallic相位演化在大面积几层Mote2的化学气相沉积生长中
机译:燃烧化学气相沉积工艺沉积低成本,高质量,高温超导带的研究进展