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High Phase Purity of Large-Sized 1T′-MoS_2 Monolayers with 2D Superconductivity

机译:具有二维超导性的大型1T'-MoS_2单层的高相纯度

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摘要

The development of transition metal dichalcogenides has greatly accelerated research in the 2D realm, especially for layered MoS2. Crucially, the metallic MoS2 monolayer is an ideal platform in which novel topological electronic states can emerge and also exhibits excellent energy conversion and storage properties. However, as its intrinsic metallic phase, little is known about the nature of 2D 1T'-MoS2, probably because of limited phase uniformity ( 80%) and lateral size (usually 1 mu m) in produced materials. Herein, solution processing to realize high phase-purity 1T'-MoS2 monolayers with large lateral size is demonstrated. Direct chemical exfoliation of millimeter-sized 1T' crystal is introduced to successfully produce a high-yield of 1T'-MoS2 monolayers with over 97% phase purity and unprecedentedly large size up to tens of micrometers. Furthermore, the large-sized and high-quality 1T'-MoS2 nanosheets exhibit clear intrinsic superconductivity among all thicknesses down to monolayer, accompanied by a slow drop of transition temperature from 6.1 to 3.0 K. Prominently, unconventional superconducting behavior with upper critical field far beyond the Pauli limit is observed in the centrosymmetric 1T'-MoS2 structure. The results open up an ideal approach to explore the properties of 2D metastable polymorphic materials.
机译:过渡金属二卤化物的开发大大加快了二维领域的研究,尤其是对于分层的MoS2。至关重要的是,金属MoS2单层是理想的平台,其中可以出现新颖的拓扑电子状态,并且还具有出色的能量转换和存储特性。然而,作为其固有的金属相,人们对2D 1T'-MoS2的性质知之甚少,这可能是由于所生产材料中有限的相均匀性(<80%)和横向尺寸(通常<1μm)。在此,对实现横向尺寸大的高相纯度的1T'-MoS 2单层的溶液处理进行说明。引入了毫米级1T'晶体的直接化学剥落技术,以成功生产出高产率的1T'-MoS2单层,具有超过97%的相纯度和前所未有的大尺寸,甚至高达数十微米。此外,大尺寸和高质量的1T'-MoS2纳米片在所有厚度(直至单层)中均表现出明显的固有超导性,伴随着从6.1到3.0 K的缓慢转变温度下降。突出的是,具有超临界上界的超常规行为在中心对称的1T'-MoS2结构中观察到了超出Pauli限的范围。结果为探索2D亚稳态多晶型材料的性质提供了理想的方法。

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  • 来源
    《Advanced Materials》 |2019年第19期|1900568.1-1900568.7|共7页
  • 作者单位

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Synerget Innovat Quantum Informat & Quantum Techn, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, Synerget Innovat Quantum Informat & Quantum Techn, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    1T '-MoS2 monolayer; 2D superconductivity; phase engineering; solution processing;

    机译:1T'-MoS2单层;二维超导;相工程;固溶处理;

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