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LARGE-SIZED PHASE-SHIFT MASK, AND METHOD FOR PRODUCING LARGE-SIZED PHASE-SHIFT MASK

机译:大尺寸移相掩模以及制造大尺寸移相掩模的方法

摘要

Provided are: a phase-shift mask which is a large-sized photomask that enables the exposure of a large-sized area to light and has a constitution suitable for the formation of a fine pattern; and a method for producing the phase-shift mask. A large-sized phase-shift mask is produced, which can be produced easily and enables the transfer of a fine pattern. The large-sized phase-shift mask has such a constitution that a light-shielding film contains chromium or a chromium compound as the main component, a phase-shift film contains chromium oxide or oxidized chromium nitride as the main component, and the phase-shift film is laminated on the light-shielding film in the light-shielding area. The reflectance of the light-shielding area can be reduced by employing such a constitution that an anti-reflective film comprising a chromium compound is additionally provided between the light-shielding film and the phase-shift film.
机译:本发明提供一种相移掩模,该相移掩模是能够使大面积的区域曝光并具有适于形成精细图案的结构的大型光掩模;以及用于制造相移掩模的方法。产生了大尺寸的相移掩模,其可以容易地制造并且使得能够转印精细图案。大型相移掩模的结构是,遮光膜以铬或铬化合物为主要成分,相移膜以氧化铬或氧化氮化铬为主要成分,在遮光区域的遮光膜上层叠有移位膜。通过采用在光屏蔽膜和相移膜之间另外设置包含铬化合物的抗反射膜的结构,可以降低光屏蔽区域的反射率。

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