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Investigation On The Low Luminous Efficiency In A Polymer Light-emitting Diode With A High Work-function Cathode By Soft Contact Lamination

机译:软接触层压法研究高功函数阴极高分子发光二极管的低发光效率

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This article reports the main origin of the low luminescent efficiency in hole-dominant polymer light-emitting diodes by controlling the hole injection and by chemically modifying the cathode by molecular monolayers. Since molecular modification of the top electrode is impossible when one deposits the electrode using a vacuum deposition method, this study was performed using a soft contact lamination technique to form electrical contacts on top of the emissive layer. The top electrode was chemically modified with an alkane thiol self-assembled monolayer (SAM) to act as an interfacial spacer layer between the emitting layer and the cathode. Herein, it is reported that, contrary to common belief, a high device quantum efficiency can be achieved from the dominantly hole-transporting device with a high work-function cathode (like Au) by facilitating more hole injection from the anode in the device with low population of exciton quenching channels near the cathode.
机译:本文通过控制空穴注入和通过分子单分子层对阴极进行化学修饰,报道了空穴占优势的聚合物发光二极管的低发光效率的主要原因。由于当使用真空沉积方法沉积顶部电极时不可能对顶部电极进行分子修饰,因此这项研究是使用软接触层压技术在发射层的顶部形成电接触而进行的。顶部电极用烷硫醇自组装单分子层(SAM)进行化学修饰,以充当发射层和阴极之间的界面隔离层。在此,据报道,与通常的观点相反,通过促进从阳极向器件内注入更多的空穴,可以从具有高功函数阴极(例如Au)的占主导地位的空穴传输器件实现高器件量子效率。阴极附近的激子猝灭通道数量少。

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