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Low resistance and high work-function WO3/Ag/MoO2 multilayer as transparent anode for bright organic light-emitting diodes

机译:低电阻,高功函数的WO 3 / Ag / MoO 2 多层用作透明有机发光二极管的透明阳极

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The authors report efficient organic light-emitting diodes (OLEDs) using a high conductive transparent WAM multilayer as anode electrode [WAM=WO3 (30nm)/Ag (10 nm)/MoO2 (5 nm)], which was prepared by thermal evaporation under room temperature condition to form the smooth morphology on anode surface, leading to reduce the injection barrier between metal/organic interface. The WAM anode shows a low sheet resistance of 8.27 Ω/sq, suitable injection workfunction of ∼ 5.68 e V, and high optical transmittance of ∼ 80% at range of visible light from 400 to 550 nm. In addition, a hole only WAM-device by atomic-force microscopy and electrical characterizations has demonstrates that the efficient hole injection property is existing at WAM/NPB interface as compared with the standard transparent conductive oxide of indium tin oxide. From the device characterization, the device performance of green fluorescent OLED based on WAM anode exhibiting a high brightness of 150 000 cd/m2 and current efficiency of 20 cd/A at driving voltage of 8 V has been achieved.
机译:作者报告了使用高导电透明WAM多层作为阳极电极[WAM = WO3(30nm)/ Ag(10 nm)/ MoO2(5 nm)]的高效有机发光二极管(OLED),该有机电极是通过在高温下进行热蒸发制备的在室温条件下在阳极表面形成平滑形态,从而减小金属/有机界面之间的注入势垒。 WAM阳极在400至550 nm的可见光范围内显示出8.27Ω/ sq的低薄层电阻,〜5.68 e V的合适注入功函和〜80%的高透光率。另外,通过原子力显微镜和电学表征的仅空穴的WAM装置已经证明,与标准的铟锡氧化物透明导电氧化物相比,WAM / NPB界面处存在有效的空穴注入性质。通过器件表征,已经获得了基于WAM阳极的绿色荧光OLED的器件性能,该器件在8 V驱动电压下具有150000 cd / m2的高亮度和20 cd / A的电流效率。

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