机译:Ⅲ-Ⅴ层和InGaAs FinFET与硅的新型异质集成技术
Department of Electrical and Computer Engineering University of California San Diego 9500 Gilman MC 0407, La Jolla, California 92093, USA,Division of Physics and Applied Physics Nanyang Technological University 21 Nanyang Link, Singapore 637371 B.-M. Nguyen Center for Integrated Nanotechnologies Los Alamos National Laboratory, P.O.Box 1663 MC K771, Los Alamos, New Mexico 87545, USA;
Department of Electrical and Computer Engineering University of California San Diego 9500 Gilman MC 0407, La Jolla, California 92093, USA;
Department of Electrical and Computer Engineering University of California San Diego 9500 Gilman MC 0407, La Jolla, California 92093, USA;
Division of Physics and Applied Physics Nanyang Technological University 21 Nanyang Link, Singapore 637371 B.-M. Nguyen Center for Integrated Nanotechnologies Los Alamos National Laboratory, P.O.Box 1663 MC K771, Los Alamos, New Mexico 87545, USA;
Department of Electrical and Computer Engineering University of California San Diego 9500 Gilman MC 0407, La Jolla, California 92093, USA;
机译:用于大规模集成Si CMOS的大规模Si晶片上高质量InGaAs HEMT层的MOCVD生长
机译:使用光流组件将InGaAsP微盘激光器异质集成在硅平台上
机译:隐藏的铰链微镜阵列(由两层单晶硅组成)的异构3D集成
机译:通过具有层间接触的FDSOI Si CMOS上InGaAs n-FinFET的3D单片集成,首次演示3D SRAM
机译:使用定向流体自组装进行硅电子设备异构集成的技术开发。
机译:通过在氧化物腔中选择性生长将InGaAs FinFET直接集成在硅上
机译:应变硅FinFET的表征和压电层的集成