INGAAS FINFET ON PATTERNED SILICON SUBSTRATE WITH INP AS A BUFFER LAYER

摘要

A method for manufacturing a semiconductor device includes providing a substrate having an array of cavities. Each of the cavities has a plurality of lateral sides, and each lateral side has a lateral direction matching a lateral crystal plane of the substrate. The method also includes forming a buffer layer on the substrate and filling the cavities, and forming a fin-type channel layer on the buffer layer. Because the independently grown crystals in the cavities have a lateral direction in line with the direction of the lateral crystal plane, the dislocation defect density is significantly reduced, thereby greatly improving the device performance.