Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique

摘要

Two deep traps associated with lattice-mismatch induced defects in n-type In_(0.042)Ga_(0.958)As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.