Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures

摘要

A regular network of 60degrees misfit dislocations aligned along two orthogonal <110> directions at the <001> interface of GaAs/InGaAs heterostructures with a small lattice-mismatch has been revealed by means of transmission electron microscopy and electron-beam induced current mode in a scanning electron microscope. The network of misfit dislocations has been also reproduced, in a form of a well-defined cross-hatch pattern on the surface of the structures, with atomic force microscopy. Almost one-to-one correspondence between the structure of misfit dislocations at the interface and the surface morphology clearly demonstrate that the cross-hatch development results primarily from misfit-dislocation generation. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 5]