Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

摘要

The authors demonstrate selective detection of terahertz radiation employing beryllium δ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Pranz-Keldysh oscillations observed in photo- and elec-troreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.