Over the past decades, a great number of two-dimensional (2D) materials, including graphene [1, 2], silicene [3, 4], transition metal dichalcogenides (TMD) [5, 6], and phosphorene [7, 8], have been extensively studied due to their unique properties. Especially, these 2D materials demonstrate some interesting electronic transport behaviors, such as giant magneto resistance (GMR) [9, 10], negative differential resistance (NDR) [11, 12], spin filtering [13, 14], and rectification [15, 16], thus having potential applications in nanoscale electronic devices. Recently, some studies have also shown that 2D materials have broad application prospects in nanoscale thermoelectric devices [17–20]. Subsequently, the research on lateral heterojunctions based on 2D materials becomes an important topic. And some theoretical studies have showed that the lateral heterojunctions have potential applications in field effect transistor and complementary metal oxide semiconductor technologies [21, 22]. Further, the lateral heterojunctions with atomic thickness have already been prepared in experiments [23, 24]. These achievements have inspired the effort for further exploring lateral heterojunctions made of more suitable 2D materials.
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