Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.51 V/μm, higher than that of the as-grown silicon nanowires, which is about 5.01 V/μm. Meanwhile, after being annealed above 650°C, Au-Si nano-particles were synthesized on the top surface of the silicon nanowire arrays and the one-dimensional Au-Si nano-particle-decorated SiNWs had a much lower turn-on field, 1.95 V/μm. The results demonstrated that annealed composite silicon nanowire array-based electron field emitters may have great advantages over many other emitters.
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机译：已经通过在硅纳米线阵列基板上沉积Au膜，然后在氢气氛下进行后热退火来制造装饰有Au-Si纳米粒子的硅纳米线阵列。场发射测量表明，未退火镀金的SiNW的导通电场为6.02至7.51 V /μm，高于生长的硅纳米线的导通电场，后者约为5.01 V /μm。同时，在650°C以上退火后，在硅纳米线阵列的顶面上合成了Au-Si纳米粒子，并且用一维Au-Si纳米粒子修饰的SiNW的导通场低得多， 1.95 V /微米结果表明，基于退火复合硅纳米线阵列的电子场发射器可能具有优于许多其他发射器的巨大优势。
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