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Direct Optical Characterization of Graphene Growth and Domains on Growth Substrates

机译:石墨烯生长和生长基质上的畴的直接光学表征

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摘要

We detailed a facile detection technique to optically characterize graphene growth and domains directly on growth substrates through a simple thermal annealing process. It was found that thermal annealing transformed the naked Cu to Cu oxides while keeping graphene and graphene-covered Cu intact. This increases the interference color contrast between Cu oxides and Cu, thus making graphene easily visible under an optical microscope. By using this simple method, we studied the factors that affect graphene nucleation and growth and achieved graphene domains with the domain size as large as ~100 μm. The concept of chemically making graphene visible is universal, as demonstrated by the fact that a solution process based on selective H2O2 oxidation has been developed to achieve the similar results in a shorter time. These techniques should be valuable for studies towards elucidating the parameters that control the grains, boundaries, structures and properties of graphene.
机译:我们详细介绍了一种简便的检测技术,可通过简单的热退火工艺直接在生长衬底上光学表征石墨烯的生长和畴。发现热退火将裸露的Cu转变为Cu氧化物,同时保持石墨烯和石墨烯覆盖的Cu完整。这增加了Cu氧化物和Cu之间的干涉色对比度,从而使得石墨烯在光学显微镜下容易可见。通过使用这种简单的方法,我们研究了影响石墨烯成核和生长的因素,并获得了尺寸约100μm的石墨烯畴。化学上使石墨烯可见的概念是普遍的,这一事实证明了以下事实:已开发出一种基于选择性H2O2氧化的溶液工艺,可以在更短的时间内获得相似的结果。这些技术对于阐明控制石墨烯的晶粒,边界,结构和特性的参数的研究应该是有价值的。

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