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Direct Growth of Graphene-like Films on Single Crystal Quartz Substrates.

机译:在单晶石英衬底上直接生长类石墨烯薄膜。

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摘要

Direct growth of graphene-like (GL) films (nano-crystalline graphite films) on single crystal quartz substrates by chemical vapor deposition (CVD) from methane and molecular beam growth (MBG) is reported. The GL films have been characterized by means of Raman spectroscopy, atomic force microscopy and electrical measurements. Raman spectroscopy reveals nanocrystalline structure of the films grown at different conditions. The thinnest CVD grown GL films obtained so far have a thickness of 1.5 nm, a relatively rough surface structure and electrical conductivity in the range of 20 kO/square. Low temperature Hall-effect measurements performed on these films have revealed that the major charge carriers are holes with mobility of 40 cm2/Vs at room temperature. While inferior to graphene in terms of electronic properties, the graphene-like films possess very high chemical sensitivity. Study of MBG grown films revealed formation of a non-conductive carbon layer of low crystallinity on the initial stage of the growth process.;In order to study the influence of the quartz substrate on the film formation process we performed ab initio simulation of the MBG process. For this simulation we used an atom-by-atom approach, which, we believe, is a closer approximation to the real molecular beam deposition process reported so far. The simulation showed that the initial formation of the film follows the atomic structure of the substrate. This leads to a high content of sp3 hybridized atoms at the initial stage of growth and explains formation of a non-conductive film. Additionally, we demonstrated how a non-conductive film becomes conductive with the increase of the film thickness. These results agree fairly well with the data obtained by AFM, electrical, and Raman measurements conducted on the films grown by MBG.;High chemical sensitivity of GL films has been demonstrated by measuring the change in their conductance during exposure to a NO2-containing atmosphere. Sensitivity of CVD grown GL films have been shown to be superior to that of MBG grown GL films. The stimulating action of ultraviolet light illumination on the chemical sensitivity has been found to be comparable to that of carbon nanotubes. A detection limit of 40 ppb (parts-per-billion) of NO2 diluted in an inert atmosphere has been estimated from the signal-to-noise ratio analysis. The optimal electrical conductance, high chemical sensitivity as well as the simple growth method make the CVD grown GL films promising for practical applications as a chemically sensitive material.;Results obtained during this work were presented on several conferences: Gotham-Metro Condensed Matter Meeting (New York, NY), April 2010 and November 2012; American Physical Society March Meeting (Dallas, TX), March 2011; Nanoelectronic Devices for Defense & Security (NANO-DDS) Conference (Brooklyn, NY), August 2011. Two papers (http://dx.doi.org/10.1016/j.snb.2013.02.067 and http://dx.doi.org/10.1016/j.snb.2013.06.023) were published based on the results presented in this thesis.
机译:据报道,通过甲烷的化学气相沉积(CVD)和分子束生长(MBG),可以在单晶石英基板上直接生长石墨烯状(GL)膜(纳米晶体石墨膜)。 GL膜已经通过拉曼光谱,原子力显微镜和电学测量来表征。拉曼光谱揭示了在不同条件下生长的薄膜的纳米晶体结构。迄今为止获得的最薄的CVD生长的GL膜具有1.5nm的厚度,相对粗糙的表面结构和20kO /平方范围内的电导率。在这些薄膜上进行的低温霍尔效应测量表明,主要的电荷载体是在室温下迁移率为40 cm2 / Vs的空穴。尽管在电子性能方面劣于石墨烯,但类石墨烯膜具有非常高的化学敏感性。对MBG生长膜的研究表明,在生长过程的初始阶段形成了低结晶度的非导电碳层;为了研究石英衬底对膜形成过程的影响,我们从头进行了MBG的模拟处理。对于此模拟,我们使用了逐个原子的方法,我们相信,该方法与迄今为止报道的实际分子束沉积过程更为接近。模拟表明,膜的初始形成遵循基底的原子结构。这导致在生长的初始阶段高含量的sp3杂化原子,并解释了非导电膜的形成。另外,我们展示了非导电膜如何随着膜厚度的增加而变得导电。这些结果与通过MBM生长的薄膜的AFM,电学和拉曼测量获得的数据非常吻合;通过测量暴露于含NO2的气氛中电导率的变化已证明GL膜具有高化学敏感性。已经证明CVD生长的GL膜的灵敏度优于MBG生长的GL膜的灵敏度。已经发现紫外线照射对化学敏感性的刺激作用与碳纳米管相当。根据信噪比分析,估计在惰性气氛中稀释的NO2的检出限为40 ppb(十亿分之一)。最佳的电导率,高的化学敏感性以及简单的生长方法使CVD生长的GL膜有望作为具有化学敏感性的材料在实际应用中应用。在此工作中获得的结果已在多个会议上进行了介绍:哥谭-迈德默凝聚会议(纽约,纽约),2010年4月和2012年11月; 2011年3月,美国物理学会三月会议(德克萨斯州达拉斯);国防与安全用纳米电子设备(NANO-DDS)会议(纽约布鲁克林),2011年8月。两篇论文(http://dx.doi.org/10.1016/j.snb.2013.02.067和http:// dx。 doi.org/10.1016/j.snb.2013.06.023)是根据本文提出的结果发表的。

著录项

  • 作者

    Samsonau, Siarhei.;

  • 作者单位

    City University of New York.;

  • 授予单位 City University of New York.;
  • 学科 Physics Molecular.;Nanoscience.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 108 p.
  • 总页数 108
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:42:17

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