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Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

机译:三元算术多态忆阻钽氧化物器件

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摘要

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.
机译:基于氧化还原的电阻切换随机存取存储器(ReRAM)具有出色的特性,可以实现未来的非易失性存储器阵列。最近,两态ReRAM实现布尔逻辑功能的能力引起了广泛关注。在这里,我们报告七种状态的氧化钽器件,这些器件可以使用三进制数系统实现固有的模运算。自从欧几里得时代以来,数学家就已经知道模块化算术(一种用于在模数限制内对数字进行运算的基本系统),并发现了从电子商务到音符的各种领域的应用。我们证明了多状态设备不仅可以大大减少存储区域的消耗,而且还可以实现新颖的内存中操作,例如使用高基数系统进行计算,而这不能使用两种状态的设备来实现。高基数系统的使用通过减少所需数字的位数来减少计算复杂性。因此,可以减少附加的计算操作的数量和逻辑器件的数量。

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