Fabrication of transition metal dichalcogenides quantum dots based on femtosecond laser ablation

摘要

As heavy metal-free quantum dots, transition metal dichalcogenides (TMDs) and boron nitride (BN) quantum dots (QDs) have aroused great interest due to features such as good thermal conductivity, chemical stability, and unique optical properties. Although TMDs have been synthesized using different methods, most of these methods require time-consuming or complex steps, limiting the applications of TMDs. We propose a fast and simple method for the synthesis of high-quality molybdenum disulfide (MoS2) QDs and tungsten disulfide (WS2) QDs based on femtosecond laser ablation and sonication-assisted liquid exfoliation. The prepared MoS2 QDs and WS2 QDs were characterized by transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. The resulting products possessed few-layered thickness with an average size of 3.7 nm and 2.1 nm. Due to the abundance of functional groups on their surface, the MoS2 QDs and WS2 QDs showed bright blue-green luminescence under UV irradiation. Our method offers a facile and novel synthetic strategy for TMDs QDs and other two-dimensional nanomaterial quantum dots, such as boron nitride quantum dots (BNQDs).