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Development of Transition Metal Dichalcogenide Based Quantum Dots for Light Emitting Diodes

机译:发光二极管过渡金属二甲基甲胺基量子点的研制

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Photoluminescent quantum dots (QDs) were synthesized by facile colloidal chemical route. Its properties were characterized and analysed by utilizing Fluorescence, FTIR and UV-Vis spectrophotometers. The resultant MoS2 QD exhibits fluorescence at 470 nm for excitation wavelength 400 nm. The as prepared sample exhibits excitation dependent emission due to poly dispersion of MoS2 in the dispersive medium which is the characteristics of colloidal synthesis. It is also observed that resultant MoS2 QDs show size tunable emission in the visible region. The FTIR spectrum confirms the attachment of oleic acid on the surface of MoS2. Absorption spectrum shows a band at 346 nm and a shoulder band at 400 nm. The band gap of quantum dots was obtained as 3.5 eV. CIE diagram indicates the shifting of colour coordinates towards green region with increasing excitation wavelength.
机译:通过容易胶体化学途径合成光致发光量子点(QDS)。通过利用荧光,FTIR和UV-Vis分光光度计来表征和分析其性质。得到的MOS2 QD在470nm处表现出荧光,用于激发波长400nm。由于作为胶体合成特征的分散介质,如制备的样品由于MOS2的多分子分散而表现出激发依赖性发射。还观察到,结果MOS2 QD在可见区域中显示尺寸可调发射。 FTIR光谱证实了油酸在MOS2表面上的附着。吸收光谱显示346nm的带和400nm的肩带。将量子点的带隙作为3.5eV获得。 CIE图表示随着激发波长的增加,颜色坐标朝向绿色区域。

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