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Unveiling the Mechanism for the Split Hysteresis Loop in EpitaxialCo2Fe1-xMnxAl Full-Heusler Alloy Films

机译:揭示外延分裂磁滞回线的机理Co2Fe1-xMnxAl全Heusler合金膜

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摘要

Utilizing epitaxial Co2Fe1-xMnxAl full-Heusler alloy films on GaAs (001), we address the controversy over the analysis for the split hysteresis loop which is commonly found in systems consisting of both uniaxial and fourfold anisotropies. Quantitative comparisons are carried out on the values of the twofold and fourfold anisotropy fields obtained with ferromagnetic resonance and vibrating sample magnetometer measurements. The most suitable model for describing the split hysteresis loop is identified. In combination with the component resolved magnetization measurements, these results provide compelling evidences that the switching is caused by the domain wall nucleation and movements with the switching fields centered at the point where the energy landscape shows equal minima for magnetization orienting near the easy axis and the field supported hard axis.
机译:利用GaAs(001)上的外延Co2Fe1-xMnxAl全Heusler合金薄膜,我们解决了分裂磁滞回线分析的争议,该问题通常在由单轴和四重各向异性组成的系统中发现。对通过铁磁共振和振动样品磁力计测量获得的两倍和四倍各向异性场的值进行定量比较。确定了用于描述分裂磁滞回线的最合适模型。结合分量解析磁化测量,这些结果提供了令人信服的证据,表明切换是由畴壁形核和运动引起的,切换场的中心是在能量分布图上显示出相等的极小值,以便磁化方向位于易轴附近。现场支持的硬轴。

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