We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 106 A/cm2. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
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机译：我们报告室温下观察到的重要弹道电子传输在具有关键的分区生长缓冲方案的InSb / AlInSb量子阱（QW）异质结构上制造的浅蚀刻四端子介观器件中的明显弹道电子传输。弹道电子传输通过负弯曲电阻特征来证明，该特征在295 K和电流密度超过10 6 A / cm 2 时非常清楚地观察到。这明确表明，通过使用有效的生长和加工策略，可以在InSb / AlInSb QW中以实用的器件尺寸利用室温弹道效应。
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