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Butterfly magnetoresistance quasi-2D Dirac Fermi surface and topological phase transition in ZrSiS

机译:ZrSiS中的蝴蝶磁致电阻准2D Dirac费米表面和拓扑相变

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摘要

Magnetoresistance (MR), the change of a material’s electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. We report the observation of an unusual “butterfly”-shaped titanic angular magnetoresistance (AMR) in the nonmagnetic Dirac material, ZrSiS, which we find to be the most conducting sulfide known, with a 2-K resistivity as low as 48(4) nΩ⋅cm. The MR in ZrSiS is large and positive, reaching nearly 1.8 × 105 percent at 9 T and 2 K at a 45° angle between the applied current (I || a) and the applied field (90° is H || c). Approaching 90°, a “dip” is seen in the AMR, which, by analyzing Shubnikov de Haas oscillations at different angles, we find to coincide with a very sharp topological phase transition unlike any seen in other known Dirac/Weyl materials. We find that ZrSiS has a combination of two-dimensional (2D) and 3D Dirac pockets comprising its Fermi surface and that the combination of high-mobility carriers and multiple pockets in ZrSiS allows for large property changes to occur as a function of angle between applied fields. This makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons as well as opens the door to creating devices focused on switching between different parts of the Fermi surface and different topological states.
机译:磁阻(MR)是一种材料的电阻随施加的磁场而变化的一种技术上重要的特性,在25多个世纪以来一直是研究的重点。我们报告了在非磁性Dirac材料ZrSiS中观察到的异常的“蝴蝶”形钛铁角磁阻(AMR),我们发现它是已知的导电性最高的硫化物,其2-K电阻率低至48(4) nΩ·cm。 ZrSiS中的MR大且为正,在施加的电流(I || a)和施加的电场(90 | 90)之间,在9 T和2 K时,在9 T和2 K时达到近1.8×10 5% °是H || c)。接近90°时,在AMR中会看到一个“倾斜”,通过分析不同角度的Shubnikov de Haas振荡,我们发现与其他已知的Dirac / Weyl材料中所见的拓扑相变非常尖锐。我们发现ZrSiS具有包括其费米表面的二维(2D)和3D Dirac腔体的组合,并且ZrSiS中高迁移率载体和多个腔体的组合允许发生较大的性能变化,这取决于所施加的涂层之间的角度领域。这使得它成为研究2D和3D Dirac电子共存的物理学的有前途的平台,并为创建专注于费米表面的不同部分和不同拓扑状态之间切换的设备打开了大门。

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