首页> 外国专利> TOPOLOGICAL PHASE TRANSITION METHOD OF THREE-DIMENSIONAL PHASE INSULATOR FOR ULTRAFAST TERAHERTZ FREQUENCY MODULATION

TOPOLOGICAL PHASE TRANSITION METHOD OF THREE-DIMENSIONAL PHASE INSULATOR FOR ULTRAFAST TERAHERTZ FREQUENCY MODULATION

机译:超快TERAHERTZ频率调制的三维相绝缘体拓扑相变方法

摘要

The present invention provides a topological phase transition method of three-dimensional (3D) phase insulator for ultrafast terahertz frequency modulation, to change a coupling degree between an energy level of metallic characteristics of the surface and phonon resonance of the bulk of a 3D phase insulator material by adjusting a composition of the 3D phase insulator material, (Bi_(i-x)In_x)_2Se_3, so as to modulate a spectrum of a terahertz frequency passing the material into an asymmetrical shape. An energy level of a surface (yellow) has a metallic topological surface state (TSS) and indium (In) is added to a material of a 3D phase insulator having an insulator or a phase insulator, so the bulk of the inside asymmetrically generates Fano resonance (FR) through interaction or interference between a first terahertz response generated in the bulk and a second terahertz response generated in a predetermined metallic part.;COPYRIGHT KIPO 2016
机译:本发明提供了用于超快太赫兹频率调制的三维(3D)相绝缘体的拓扑相变方法,以改变表面金属特性的能级与3D相绝缘体的整体的声子共振之间的耦合度。通过调节3D相绝缘体材料(Bi_(ix)In_x)_2Se_3的成分来调制该材料,从而调制使该材料成为不对称形状的太赫兹频率的频谱。表面(黄色)的能级具有金属拓扑表面状态(TSS),并且将铟(In)添加到具有绝缘体或相绝缘体的3D相绝缘体的材料中,因此内部的大部分不对称地生成Fano通过在主体中产生的第一太赫兹响应与在预定金属部件中产生的第二太赫兹响应之间的相互作用或干扰产生共振(FR).; COPYRIGHT KIPO 2016

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