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A Novel Seedless TSV Process Based on Room Temperature Curing Silver Nanowires ECAs for MEMS Packaging

机译:基于室温固化银纳米线ECA的无种子TSV工艺用于MEMS包装

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摘要

The through-silicon-vias (TSVs) process is a vital technology in microelectromechanical systems (MEMS) packaging. The current via filling technique based on copper electroplating has many shortcomings, such as involving multi-step processes, requiring sophisticated equipment, low through-put and probably damaging the MEMS devices susceptible to mechanical polishing. Herein, a room temperature treatable, high-efficient and low-cost seedless TSV process was developed with a one-step filling process by using novel electrically conductive adhesives (ECAs) filled with silver nanowires. The as-prepared ECAs could be fully cured at room temperature and exhibited excellent conductivity due to combining the benefits of both polymethyl methacrylate (PMMA) and silver nanowires. Complete filling of TSVs with the as-prepared 30 wt% silver nanowires ECAs was realized, and the resistivity of a fully filled TSV was as low as 10−3 Ω·cm. Furthermore, the application of such novel TSV filling process could also be extended to a wide range of different substrates, showing great potential in MEMS packaging, flexible microsystems and many other applications.
机译:硅通孔(TSV)工艺是微机电系统(MEMS)封装中的一项至关重要的技术。当前基于铜电镀的通孔填充技术具有许多缺点,例如涉及多步骤工艺,需要复杂的设备,低通量并且可能损坏易受机械抛光的MEMS器件。在本文中,通过使用填充有银纳米线的新型导电粘合剂(ECA),通过一步填充工艺开发了一种可室温处理,高效且低成本的无籽TSV工艺。由于结合了聚甲基丙烯酸甲酯(PMMA)和银纳米线的优势,所制备的ECA可以在室温下完全固化并显示出出色的导电性。用制备的30 wt%的银纳米线ECA完全填充TSV,完全填充的TSV的电阻率低至10 -3 Ω·cm。此外,这种新颖的TSV填充工艺的应用也可以扩展到各种不同的基板,在MEMS封装,柔性微系统和许多其他应用中显示出巨大潜力。

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