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Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

机译:用于高密度可拉伸电子器件的超可拉伸互连

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摘要

The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS)-type) process recipes using bulk integrated circuit (IC) microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R) post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic) stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.
机译:可伸缩电子设备(SE)的令人兴奋的领域承诺了许多新颖的应用,特别是体内和医疗诊断设备。但是,未来的高级SE微型设备将需要具有微米级封装的高密度,极易拉伸的互连,这要求使用大容量集成电路(IC)微型制造工具的经过验证的标准化(互补金属氧化物半导体(CMOS)型)工艺配方和小间距光刻图案。在这里,我们通过引入具有CMOS功能的独立式微型互连结构来解决这种对高密度SE器件的超细加工和极高可拉伸性的综合挑战,该结构通过屈曲,扭转和弯曲的相互作用来充分利用其3D运动学自由度可拉伸性。通过使用刚柔结合(F2R)后处理技术,使后端互连结构自立,可确保与标准CMOS型批处理处理集成,从而实现高可拉伸性的常规微加工互连。这些独立式结构的性能和可重复性是有前途的:超过2000%的弹性拉伸和超过3000%的最终(塑料)拉伸,电阻变化小于0.3%,以及在1000%拉伸时电阻大于1%的循环次数超过1000万次更改。这项通用技术为激动人心的高度可扩展的微型设备提供了一条新途径。

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