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Floating Zone Growth and Characterization of (Ca1–xNdx)12Al14O33+6x (x ∼ 0.001) Single Crystals

机译:(Ca1-xNdx)12Al14O33 + 6x(x〜0.001)单晶的浮动区生长和表征

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摘要

Rare earth Nd3+ ion-doped Ca12Al14O33 single crystals were grown at a rate of 1 mm/h by the floating zone technique in an oxygen atmosphere. The Nd concentration in the central area of the as-grown crystals was higher than that in the peripheral area due to the highly concave growth interface shape. The average Nd concentration in the as-prepared parallelepiped slices of ∼6 × 3 × 2 mm3 for electride fabrication was ∼0.093 ± 0.011 atom % Nd in contrast to the nominal 0.1 atom % Nd concentration. The Nd-doped C12A7:Nd single crystalline electride prepared by thermal treatment with a Ti metal at 1100 °C for 48 h induced an insulator–metal transition with the highest conductivity of approximately 1165 S/cm. These annealing conditions provide an approach to completely remove clathrated oxide ions from the crystallographic cages, leading to the formation of C12A7:Nd(e) and C12A7:e electrides with high-density electrons (∼2.4 ± 0.2 × 1021 and ∼1.8 ± 0.1 × 1021 cm–3) localized in thecages. The carrier mobility at room temperature in C12A7:Nd(e) was very similar to that in C12A7:e, even though it was very high at temperaturesbelow ∼150 K.
机译:稀土Nd 3 + 离子掺杂Ca12Al14O33单晶通过浮区技术在氧气气氛中以1mm / h的速率生长。由于生长界面的形状高度凹进,晶体生长中心区域的Nd浓度高于周围区域的Nd浓度。与标称0.1原子%的Nd浓度相比,制备的用于制备氮化物的平行六面体切片的平均Nd浓度为〜0.093±0.011原子%Nd,约为6×3×2 mm 3 。通过在1100°C下用Ti金属热处理48 h制备的Nd掺杂的C12A7:Nd单晶氮化物,引起绝缘体-金属过渡,导电率最高,约为1165 S / cm。这些退火条件提供了一种从晶格笼中完全除去笼形氧化物离子的方法,从而导致形成C12A7:Nd(e )和C12A7:e 电极高密度电子(〜2.4±0.2×10 21 和〜1.8±0.1×10 21 cm –3 )笼子。尽管在室温下C12A7:Nd(e )中的载流子迁移率与C12A7:e 中的载流子迁移率非常相似低于〜150K。

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