We report our observations on the higher carrier mobility and higher conductivity of sulfur-doped n-type diamond thin films synthesized by the hot filament chemical vapor deposition(HFCVD).The structural and electrical characterizations of the films are measured by X-ray diffraction(XRD),Raman spectroscopy,scanning electron microscope(SEM),energy dispersion X-ray spectra(EDX),and Hall effect measurements.It is found that the sulfur atoms are incorporated into the polycrystalline diamond films.The n-type conductivity of the films increases with the H_2S concentration,and a conductivity of the films as high as 1.82Ω^(-1)·cm^(-1)is achieved.The results show that the sulfur atom plays an important role in the structural and electrical properties of sulfur-doped diamond thin films.
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