Effect of Substrate Nature on the Structural, Optical and Electrical Properties of In2S3 Thin Films

摘要

In this study, In2S3 thin films have been deposited on ITO and fluorine-tinoxide FTO coated glass substrates by single source vacuum thermal evaporation annealed in vacuum a 300°C - 400°C for 1 h. The samples structure was characterized by X-ray diffraction, revealing the quadratic structure of In2S3 and the crystallinity depends on the temperature of annealing and nature of substrate. The various structural parameters, such as, crystalline size, dislocation density, strain and texture coefficient were calculated. The optical properties show that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model. By using this model, the dispersion parameters and the high-frequency dielectric constant were determined. The Hall Effect has been studied at room temperature. The Hall voltages, the Hall coefficient (RH) and mobility (μH) have been measured at different magnetic and electric fields. The films show n-type behavior irrespective of temperature and composition.