第三代半导体Ⅲ族氮化物的物理与工程——从基础物理到产业发展的典范

摘要

以氮化镓(GaN)为代表的Ⅲ族氮化物属于宽禁带半导体,即通常所谓"第三代"半导体材料.作为Si、Ge以及传统Ⅲ-Ⅴ族化合物半导体之后的新一代半导体材料,GaN 具有更大的禁带宽度、更高的击穿电场、更稳定的物理化学性质等优异特性,已经成为半导体研究极为重要的领域和国家重大研究方向.尽管Ⅲ族氮化物的晶体质量与传统半导体材料相比仍然有很大差距,但并不妨碍Ⅲ族氮化物及其量子结构在光电器件及电子器件中的广泛应用,围绕GaN及其他相关氮化物半导体的研究和开发,在物理与工程方面都具有极为特殊的意义,是基础物理研究和产业化应用结合的典范.%Represented by GaN,Ⅲ-Nitrides belong to a new group of wide-gap semiconductor materials,the so called"third generation semiconductors".Comparing with traditional semi-conductors,such as Ge,Si and Ⅲ-Ⅴ semiconductors,GaN has many superior properties, e.g.wide band-gap,high breakdown voltage,high physical and chemical stability.Although the crystal quality of GaN is worse than the"traditional"semiconductors,it didn't pose big obstacles for the application of GaN-based systems in opto-electronic and electronic devices. GaN,as a new wide-gap semiconductor,is a successful model of combination of basic research and commercialization during the last few decades.