等离子刻蚀多晶硅问题解析

摘要

Polysilicon is very important in the MOS IC circuit. The doped polysilicon is usually used as the conductive material in the gate electrode. While the doped polysilicon etched determines the gate width of the active device and the gate width of the active device determines the edge of the drain and source. Wet etch can not be used because of sideways etch, so dry etch should be used instead. The brief analysis and solution to the problems in dry etch of the polysilicon are described in this paper.%多晶硅在MOS电路中占有极其重要的位置,掺杂后的多晶硅往往是用做栅极的导电材料.而腐蚀后的掺杂多晶硅的线宽决定了有源器件的栅长,而栅长确定了沟道长度并定义出了源漏电极的边界.湿法腐蚀多晶因其侧腐量大而不能使用,必须应用干法刻蚀,这里对多晶硅在干法刻蚀方面的一些问题进行了简要的分析及解决.