采用脉冲磁控溅射法制备氢化微晶硅薄膜,利用X射线衍射、拉曼光谱、扫描电子显微镜和四探针测试仪对薄膜结构和电学性能进行表征和测试,研究了衬底温度、氢气稀释浓度和溅射功率对硅薄膜结构和性能的影响.结果表明:在一定范围内,通过控制合适的衬底温度、增大氢气稀释浓度及提高溅射功率,可以制备高质量的微晶硅薄膜.在衬底温度为400℃、氢气稀释浓度为90％及溅射功率为180W的条件下制备的微晶硅薄膜,其晶化率为72.2％,沉积速率为0.48nm/s.%Hydrogenated microcrystalline silicon (μc-Si: H) thin films were prepared by pulsed magnetron sputtering. XRD, Raman spectrum, SEM and four-point probe were employed to characterize the structure and electric properties of the films, and the influences of substrate temperature, hydrogen concentration and sputtering power on the structure and electric properties of silicon thin films were investigated. The results show that within a certain range, high quality microcrystalline silicon thin film can be deposited by controlling substrate temperature, increasing hydrogen concentration and sputtering power. By adopting the optimal process condition with substrate temperature 400℃ , hydrogen concentration 90% and sputtering power 180W, microcrystalline silicon thin film with ctystalline volume fraction up to 72. 2% can be prepared, and the deposition rate is 0. 48nm/s.
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