In order to realize the non-destructive measurement of oil-film thickness, AlN thin film needs to be deposited on steel as the component for emitting and receiving ultrasound. This paper takes AI as the bufler layer and uses the reactive magnetron sputte-ring technology to deposit the AIN thin film on stainless steel, and studies the effect of sputtering power and N2 concentration on its growth. The films are characterized by X-ray Diffraction (XRD). The surface morphology and roughness (RMS) of the films are ob-served by Atomic Force Microscope ( AFM) . The results reveal that the higher sputtering power is advantageous to the oriented AlN thin film deposition. but the excess sputtering power could result in its high surface roughness. The N2 concentration has an effect on the crystal inity of AlN films. Its ratio of 30 to 70 percent is betler.%为实现工程中对油膜厚度无损检测的目的，需要在钢表面制备AlN压电薄膜，作为声发射接收元件。采用直流反应磁控溅射技术，利用Al作为过渡基层，在不锈钢上沉积AlN薄膜。研究了改变溅射功率、氮气流量比等工艺条件对AlN薄膜生长的影响。利用X射线衍射仪( XRD)和原子力显微镜( AFM)对薄膜取向性及表面质量做了表征。实验结果表明，溅射功率的增加有利于AlN薄膜的择优取向生长，但过高的功率会影响薄膜表面的粗糙度；氮气流量比过低或过高都会影响AlN的生长，应将其控制在30%~70%的范围为宜。
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