GaN晶片的CMP加工工艺研究

摘要

The article has studied the chemistry mechanical polishing processing of GaN chip, analyzed the influence of CMP processing on the GaN chip surface quality. The experiment took the density 30% H2O2 solution and the iron after Fenton chemical responded about 20 mins as the polishing solution, Uses two kinds of different abrasive granularity W5 and WO. 5 polished separately to the chip surface, carried on the analysis test to the chip surface after different technological parameter processing, and extrapolated the chemical reaction which possibly occurred in the CMP processing in the chip surface.%研究了GaN晶片的化学机械抛光(CMP)工艺,分析了在CMP加工工艺过程中对GaN晶片表面质量所产生的影响.实验采用质量分数30％的H2O2溶液与铁经过Fenton化学反应20 min后作为抛光液,并分别利用2种不同磨粒粒度W5和W0.5对晶片表面抛光,对不同工艺参数加工后的晶片表面进行测试分析,并推测加工过程中晶片表面可能发生的化学反应.