基质刻蚀的高功率外腔面发射激光器

摘要

为了降低光抽运外腔面发射激光器的热效应,提高激光器的输出功率,采用液体毛细键合方法将逆序生长的半导体外延片与高热导率的碳化硅散热窗口键合,并用化学刻蚀方法去除外延片的基质.实验研究了用基质刻蚀的外延片搭建的外腔面发射激光器的性能.当增益介质的有源区为InGaAs/AlGaAs多量子阱、抽运源为808nm的光纤耦合输出半导体激光器,输出镜对激光波长透过率为3％时,在室温下获得TEM00模的最大输出功率0.52W,激光波长1018nm,光谱线宽2nm(半峰全宽),激光器的光光转换效率约为20％.测得x方向与y方向的M2因子分别为1.01和1.00,说明输出光束为质量优良的近衍射极限高斯光束.结果表明,基质刻蚀技术可明显改善外腔面发射激光器的热性能,获得高功率、高光束质量的激光输出.%To decrease the thermal effect of a vertical-external-cavity surface-emitting laser and increase its output power, a high thermal conductivity SiC heatspreader was bond on the reverse-order semiconductor wafer with the capillary method, and then the substrate was removed by means of chemical etch. The characteristics of the laser formed by the substrate-etched wafer were experimentally studied. When the active region in the gain structure is InGaAs/AlGaAs multiple quantum wells, the pump source is a fiber-coupled 808nm diode laser, and the transmission of the output coupler is 3% at laser wavelength, the TEM00 mode output power of 0. 52W and the optical-to-optical conversion efficiency of 20% are obtained at room temperature. The laser wavelength is 1018nm, and the spectrum width is 2nm(full width half maximum) . The measured M2 factor in x and y direction of 1. 01 and 1. 00 demonstrate the near diffraction-limited Gaussian beam of the laser. It can be concluded that the substrate-etching technology can significantly improve the thermal property of vertical-external-cavity surface-emitting lasers and results in high power and high beam quality.