High Power (23 W) Vertical External-Cavity Surface-Emitting Laser emitting at 1180 nm

摘要

We report high power operation of a vertical external-cavity surface-emitting laser (VECSEL) operating around 1180 nm. The gain chip of the VECSEL comprises 10 strain-compensated GalnAs/GaAs quantum wells in a top-emitting configuration. A maximum output power of 23 W was achieved with a mount temperature of about 0 ℃, and 20.5 W with the mount temperature of about 12 ℃. By introducing a birefringent filter inside the laser cavity we demonstrate a tuning range of 67 nm. The gain chip was also used to construct a VECSEL for single-frequency operation. In this configuration, a maximum output power of about 11 W was recorded.