首页> 外国专利> High power vertical external cavity surface emitting laser

High power vertical external cavity surface emitting laser

机译:大功率垂直外腔面发射激光器

摘要

gain efficiency in the quantum well layer is increased, the lasing efficiency is enhanced vertical external resonant surface-emitting laser (VECSEL) a device is disclosed. VECSEL device according to the present invention, the lower DBR mirror formed on the substrate, RPG layer formed on the lower DBR mirror, the capping layer formed on the RPG layer, the optical pump and the lower DBR mirror for irradiating pumping light to the surface of the capping layer opposite to an external resonator mirror which is installed on the outside, the RPG layer is formed of a material having the larger band gap width than the pumping light energy band gap that is provided periodically to the nodes of the standing wave (node) location, 1 includes the gain layer comprising a barrier layer and a second barrier layer provided on the upper and lower portions of the first barrier layers to be interposed with a plurality of InGaAs quantum well layer is formed of a material of the quantum well layer, respectively.
机译:公开了一种器件,该器件增加了量子阱层中的增益效率,提高了激光效率,垂直外部谐振表面发射激光器(VECSEL)。根据本发明的VECSEL器件,下部DBR镜形成在基板上,RPG层形成在下部DBR镜上,覆盖层形成在RPG层上,光泵和下部DBR镜用于将泵浦光照射到表面上在与安装在外部的外部谐振器镜相对的覆盖层的另一端,RPG层由带隙宽度大于周期性提供给驻波节点的泵浦光能带隙的材料制成。节点位置,1包括增益层,其包括势垒层和第二势垒层,第二势垒层设置在第一势垒层的上部和下部,以与多个InGaAs量子阱层插入,该量子阱层由量子阱的材料形成层。

著录项

  • 公开/公告号KR101168283B1

    专利类型

  • 公开/公告日2012-07-30

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050072965

  • 发明设计人 김기성;김택;전헌수;

    申请日2005-08-09

  • 分类号H01S5/183;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:44

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号